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Zener breakdown : ウィキペディア英語版 | Zener effect
The Zener effect is a type of electrical breakdown in a reverse biased p-n diode in which the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to a large number of free minority carriers, which suddenly increase the reverse current. Zener breakdown is employed in a Zener diode. ==Mechanism== Under a high reverse-bias voltage, the p-n junction's depletion region expands, leading to a high strength electric field across the junction. A sufficiently strong electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor leading to a large number of free charge carriers. This sudden generation of carriers rapidly increases the reverse current and gives rise to the high slope conductance of the Zener diode.
抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Zener effect」の詳細全文を読む
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